-
1
-
-
35548948883
-
Determination of the valence band offset of wurtzite InNZnO heterojunction by x-ray photoelectron spectroscopy
-
DOI 10.1063/1.2800311
-
R. Q. Zhang, P. F. Zhang, T. T. Kang, H. B. Fan, X. L. Liu, S. Y. Yang, H. Y. Wei, Q. S. Zhu, and Z. G. Wang, Appl. Phys. Lett. APPLAB 0003-6951 91, 162104 (2007). 10.1063/1.2800311 (Pubitemid 350004026)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.16
, pp. 162104
-
-
Zhang, R.1
Zhang, P.2
Kang, T.3
Fan, H.4
Liu, X.5
Yang, S.6
Wei, H.7
Zhu, Q.8
Wang, Z.9
-
3
-
-
33646198048
-
-
PRLTAO 0031-9007. 10.1103/PhysRevLett.44.1620
-
E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. PRLTAO 0031-9007 44, 1620 (1980). 10.1103/PhysRevLett.44.1620
-
(1980)
Phys. Rev. Lett.
, vol.44
, pp. 1620
-
-
Kraut, E.A.1
Grant, R.W.2
Waldrop, J.R.3
Kowalczyk, S.P.4
-
4
-
-
0000332363
-
-
APPLAB 0003-6951. 10.1063/1.112247
-
G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. APPLAB 0003-6951 65, 610 (1994). 10.1063/1.112247
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 610
-
-
Martin, G.1
Strite, S.2
Botchkarev, A.3
Agarwal, A.4
Rockett, A.5
Morkoc, H.6
Lambrecht, W.R.L.7
Segall, B.8
-
5
-
-
38649126536
-
Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
-
DOI 10.1063/1.2716994
-
P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, T. Wang, P. J. Parbrook, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 90, 132105 (2007). 10.1063/1.2716994 (Pubitemid 46516862)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.13
, pp. 132105
-
-
King, P.D.C.1
Veal, T.D.2
Jefferson, P.H.3
McConville, C.F.4
Wang, T.5
Parbrook, P.J.6
Lu, H.7
Schaff, W.J.8
-
6
-
-
59849119408
-
-
APPLAB 0003-6951. 10.1063/1.3075060
-
A. L. Yang, H. P. Song, X. L. Liu, H. Y. Wei, Y. Guo, G. L. Zheng, C. M. Jiao, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, Appl. Phys. Lett. APPLAB 0003-6951 94, 052101 (2009). 10.1063/1.3075060
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 052101
-
-
Yang, A.L.1
Song, H.P.2
Liu, X.L.3
Wei, H.Y.4
Guo, Y.5
Zheng, G.L.6
Jiao, C.M.7
Yang, S.Y.8
Zhu, Q.S.9
Wang, Z.G.10
-
8
-
-
36449009352
-
Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy
-
DOI 10.1063/1.116177, PII S0003695196017184
-
G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. APPLAB 0003-6951 68, 2541 (1996). 10.1063/1.116177 (Pubitemid 126683969)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.18
, pp. 2541-2543
-
-
Martin, G.1
Botchkarev, A.2
Rockett, A.3
Morkoc, H.4
-
9
-
-
31144446699
-
Valence band offset of wurtzite InN/AIN heterojunction determined by photoelectron spectroscopy
-
DOI 10.1063/1.2165195, 032105
-
C. -L. Wu, C. -H. Shen, and S. Gwo, Appl. Phys. Lett. APPLAB 0003-6951 88, 032105 (2006). 10.1063/1.2165195 (Pubitemid 43133691)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.3
, pp. 1-3
-
-
Wu, C.-L.1
Shen, C.-H.2
Gwo, S.3
-
10
-
-
58449097854
-
-
APECE4 1882-0778. 10.1143/APEX.2.011002
-
T. Fujii, K. Shimomoto, R. Ohba, Y. Toyoshima, K. Horiba, J. Ohta, H. Fujioka, M. Oshima, S. Ueda, H. Yoshikawa, and K. Kobayashi, Appl. Phys. Express APECE4 1882-0778 2, 011002 (2009). 10.1143/APEX.2.011002
-
(2009)
Appl. Phys. Express
, vol.2
, pp. 011002
-
-
Fujii, T.1
Shimomoto, K.2
Ohba, R.3
Toyoshima, Y.4
Horiba, K.5
Ohta, J.6
Fujioka, H.7
Oshima, M.8
Ueda, S.9
Yoshikawa, H.10
Kobayashi, K.11
-
11
-
-
0001154218
-
-
APPLAB 0003-6951. 10.1063/1.123140
-
C. I. Wu and A. Kahn, Appl. Phys. Lett. APPLAB 0003-6951 74, 546 (1999). 10.1063/1.123140
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 546
-
-
Wu, C.I.1
Kahn, A.2
-
12
-
-
79955998321
-
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
-
DOI 10.1063/1.1481782
-
H. W. Jang, J. -H. Lee, and J. -L. Lee, Appl. Phys. Lett. APPLAB 0003-6951 80, 3955 (2002). 10.1063/1.1481782 (Pubitemid 34638105)
-
(2002)
Applied Physics Letters
, vol.80
, Issue.21
, pp. 3955
-
-
Jang, H.W.1
Lee, J.-H.2
Lee, J.-L.3
-
13
-
-
0344495436
-
Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopy
-
DOI 10.1002/pssb.200303543
-
H. W. Jang, K. W. Ihm, T. -H. Kang, J. -H. Lee, and J. -L. Lee, Phys. Status Solidi B PSSBBD 0370-1972 240, 451 (2003). 10.1002/pssb.200303543 (Pubitemid 37469716)
-
(2003)
Physica Status Solidi (B) Basic Research
, vol.240
, Issue.2
, pp. 451-454
-
-
Jang, H.W.1
Ihm, K.W.2
Kang, T.-H.3
Lee, J.-H.4
Lee, J.-L.5
-
15
-
-
0000559580
-
Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy
-
DOI 10.1063/1.116355, PII S0003695196026204
-
J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. APPLAB 0003-6951 68, 2879 (1996). 10.1063/1.116355 (Pubitemid 126684067)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.20
, pp. 2879-2881
-
-
Waldrop, J.R.1
Grant, R.W.2
-
16
-
-
0001590229
-
-
JAPIAU 0021-8979. 10.1063/1.369664
-
O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. JAPIAU 0021-8979 85, 3222 (1999). 10.1063/1.369664
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 3222
-
-
Ambacher, O.1
Smart, J.2
Shealy, J.R.3
Weimann, N.G.4
Chu, K.5
Murphy, M.6
Schaff, W.J.7
Eastman, L.F.8
Dimitrov, R.9
Wittmer, L.10
Stutzmann, M.11
Rieger, W.12
Hilsenbeck, J.13
-
17
-
-
21544480101
-
-
APPLAB 0003-6951. 10.1063/1.112764
-
J. Baur, K. Maier, M. Kunzer, U. Kaufmann, and J. Schneider, Appl. Phys. Lett. APPLAB 0003-6951 65, 2211 (1994). 10.1063/1.112764
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 2211
-
-
Baur, J.1
Maier, K.2
Kunzer, M.3
Kaufmann, U.4
Schneider, J.5
-
18
-
-
0033316906
-
Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
-
DOI 10.1016/S0038-1101(99)00146-X
-
Hadis Morkoc, Roberto Cingolani, and Bernard Gil, Solid-State Electron. SSELA5 0038-1101 43, 1753 (1999). 10.1016/S0038-1101(99)00146-X (Pubitemid 30506725)
-
(1999)
Solid-State Electronics
, vol.43
, Issue.10
, pp. 1909-1927
-
-
Morkoc, H.1
Cingolani, R.2
Gil, B.3
-
19
-
-
33646171801
-
-
PRBMDO 0163-1829. 10.1103/PhysRevB.28.1965
-
E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. B PRBMDO 0163-1829 28, 1965 (1983). 10.1103/PhysRevB.28.1965
-
(1983)
Phys. Rev. B
, vol.28
, pp. 1965
-
-
Kraut, E.A.1
Grant, R.W.2
Waldrop, J.R.3
Kowalczyk, S.P.4
-
20
-
-
0000999006
-
-
JAPIAU 0021-8979. 10.1063/1.368355
-
S. W. King, C. Ronning, R. F. Davis, M. C. Benjamin, and R. J. Nemanich, J. Appl. Phys. JAPIAU 0021-8979 84, 2086 (1998). 10.1063/1.368355
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 2086
-
-
King, S.W.1
Ronning, C.2
Davis, R.F.3
Benjamin, M.C.4
Nemanich, R.J.5
-
21
-
-
22644451040
-
-
JVTBD9 1071-1023. 10.1116/1.590808
-
A. Rizzi, R. Lantier, F. Monti, H. Lüth, F. Della Sala, A. Di Carlo, and P. Lugli, J. Vac. Sci. Technol. B JVTBD9 1071-1023 17, 1674 (1999). 10.1116/1.590808
-
(1999)
J. Vac. Sci. Technol. B
, vol.17
, pp. 1674
-
-
Rizzi, A.1
Lantier, R.2
Monti, F.3
Lüth, H.4
Della Sala, F.5
Di Carlo, A.6
Lugli, P.7
-
22
-
-
4244083530
-
-
PRLTAO 0031-9007. 10.1103/PhysRevLett.79.3934
-
A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Phys. Rev. Lett. PRLTAO 0031-9007 79, 3934 (1997). 10.1103/PhysRevLett.79.3934
-
(1997)
Phys. Rev. Lett.
, vol.79
, pp. 3934
-
-
Smith, A.R.1
Feenstra, R.M.2
Greve, D.W.3
Neugebauer, J.4
Northrup, J.E.5
-
24
-
-
1442288216
-
-
PRBMDO 0163-1829. 10.1103/PhysRevB.69.035325
-
G. Koblmüller, R. Averbeck, H. Riechert, and P. Pongratz, Phys. Rev. B PRBMDO 0163-1829 69, 035325 (2004). 10.1103/PhysRevB.69.035325
-
(2004)
Phys. Rev. B
, vol.69
, pp. 035325
-
-
Koblmüller, G.1
Averbeck, R.2
Riechert, H.3
Pongratz, P.4
|