메뉴 건너뛰기




Volumn 5, Issue 11, 2010, Pages 1852-1855

Record endurance for single-walled carbon nanotube-based memory cell

Author keywords

Carbon nanotube; Data retention; Endurance; Field effect transistor; Hysteresis; Memory

Indexed keywords

CHARGE STORAGE; CURRENT DRIVES; DATA RETENTION; DEVICE PERFORMANCE; DRAIN BIAS; ENDURANCE; IN-VACUUM; MEMORY; MEMORY CELL; MEMORY DEVICE; OPERATING CYCLE; SINGLE-WALLED CARBON;

EID: 78049423876     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9727-6     Document Type: Article
Times cited : (60)

References (24)
  • 18
    • 59449093569 scopus 로고    scopus 로고
    • Electrical transport in single-wall carbon nanotube
    • A. Jorio, G. Dresselhaus, and M. S. Dresselhaus (Eds.), Berlin, Heidelberg: Springer
    • M. J. Biercuk, S. Ilani, C. M. Marcus, P. L. McEuen, Electrical transport in single-wall carbon nanotube, in Carbon Nanotubes, Topics Appl. Phys, vol. 111, ed. by A. Jorio, G. Dresselhaus, M. S. Dresselhaus (Springer, Berlin, Heidelberg, 2008), pp. 455-493.
    • (2008) Carbon Nanotubes, Topics Appl. Phys , vol.111 , pp. 455-493
    • Biercuk, M.J.1    Ilani, S.2    Marcus, C.M.3    McEuen, P.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.