Metal-insulator-metal transistors

Advanced Materials

Volumn 20, Issue 11, 2008, Pages 2120-2124

  Stallinga, Peter ^a   Roy, V A L ^b   Xu, Zong Xiang ^b   Xiang, Hai Feng ^b   Che, Chi Ming ^b  

^a UNIVERSITY OF ALGARVE   (Portugal)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; MICROSCOPIC EXAMINATION; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SILICON COMPOUNDS; SUBSTRATES; THERMAL EVAPORATION; THIN FILM TRANSISTORS; TRANSISTORS;

COST OF PRODUCTIONS; DENSITY OF STATES; FIELD EFFECTS; GATE STRUCTURES; SI SUBSTRATES; SOURCE AND DRAIN ELECTRODES; SOURCE AND DRAINS;

METALS;

EID: 55049119053     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200702525     Document Type: Article

References (22)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley & Sons, New York 1981
2. M. J. Powell, IEEE Trans. Electron Dev. 1989, 36, 2753.
3. F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, D. M. de Leeuw, Phys. Rev. Lett. 2004, 92, 116 802.
4. H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, E. P. Woo, Science 2000, 290, 2123.
5. F. Garnier, R. Hajlaoui, A. Yassar, P. Srivastava, Science 1994, 265, 1684.
6. B. A. Ridley, B. Nivi, J. M. Jacobson, Science 1999, 286, 746.
7. A. Hellemans, Science 1999, 283, 771.
8. C. R. Kagan, D. B. Mitzi, C. D. Dimitrakopoulos, Science 1999, 286, 945.
9. A. I. Kingon, J.-P. Maria, S. K. Streifter, Nature 2000, 406, 1032.
10. I.-D. Kim, M.-H. Lin, K. T. Kang, H.-O. Kim, S.-Y. Choi, Appl. Phys. Lett. 2006, 89, 022 905.
11. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, J. M. Shaw, Science 1999, 283, 822.
12. H. Sirringhaus, Nat. Mater. 2003, 2, 641.
13. E. J. Meijer, D. M. De Leeuw, S. Setayesh, E. Van Veenendaal, B.-H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Schert, T. M. Klapwijk, Nat. Mater. 2003, 2, 678.
14. C. Reese, M. Roberts, M.-m. Ling, Z. Bao, Mater. Today 2004, 7, 20.
15. A. Facchetti, Mater. Today 2007, 10, 28.
16. A. Hepp, H. Heil, W. Weize, M. Ahles, R. Schmechel, H. von Seggern, Phys. Rev. Lett. 2003, 91, 157 406.
17. a) P. Stallinga, H. L. Gomes, Synth. Met. 2006, 156, 1305.
18. b) P. Stallinga, H. L. Gomes, Synth. Met. 2006, 156, 1316.
19. P. Stallinga, H. L. Gomes, Org. Electron. 2006, 7, 592.
20. P. Stallinga, H. L. Gomes, Org. Electron. 2007, 8, 300.
21. L. Kouwenhoven, Science 1997, 275, 1896.
22. A. L. Robinson, Science 1980, 208, 1246.