Effects of rf power on the structural properties of carbon nitride thin films prepared by plasma enhanced chemical vapour deposition

Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 4981-4986

  Othman, Maisara ^a   Ritikos, Richard ^a   Khanis, Noor Hamizah ^a   Rashid, Nur Maisarah Abdul ^a   Rahman, Saadah Abdul ^a   Gani, Siti Meriam Ab ^a   Muhamad, Muhamad Rasat ^a  

^a UNIVERSITY OF MALAYA   (Malaysia)

Author keywords

Carbon nitride; H etching; Ion bombardment effect; Rf PECVD; Rf power; Structural properties

Indexed keywords

CARBON NITRIDE THIN FILMS; DEPOSITED FILMS; EQUILIBRIUM CONDITIONS; ETCHING EFFECT; H ETCHING; N INCORPORATION; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; RADIO FREQUENCY PLASMA; RF-PECVD; RF-POWER; SECONDARY REACTIONS; STRUCTURAL AND MORPHOLOGICAL PROPERTIES;

CARBON FILMS; CARBON NITRIDE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ETCHING; FILM GROWTH; GROWTH KINETICS; ION BOMBARDMENT; IONS; KURCHATOVIUM; METHANE; NITROGEN; NITROGEN PLASMA; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; SURFACE STRUCTURE; THIN FILMS;

STRUCTURAL PROPERTIES;

EID: 79957633258     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.065     Document Type: Conference Paper

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