SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 5092-5095

Highly reflective nc-Si:H/a-CNx:H multilayer films prepared by r.f. PECVD technique

(5) Ritikos, Richard a Goh, Boon Tong a Sharif, Khairul Anuar Mat a Muhamad, Muhamad Rasat a Rahman, Saadah Abdul a

a UNIVERSITY OF MALAYA (Malaysia)

Author keywords

AES; FESEM; nc Si:H a CNx:H multilayer; Reflectance spectra

Indexed keywords

AES; CHEMICAL VAPOURS; CROSS CONTAMINATION; CROSS-SECTION IMAGES; CRYSTAL SILICON; DEPOSITION TECHNIQUE; DOUBLE BONDS; FESEM; FIELD EFFECTS; FT-IR SPECTRUM; H-BONDS; HIGH REFLECTIVITY; MULTI-LAYER THIN FILM; MULTI-LAYERED FILMS; MULTI-LAYERED STRUCTURE; MULTILAYERED THIN FILMS; NC-SI:H; NC-SI:H/A-CNX:H MULTILAYER; NEAR INFRARED; OPTICAL REFLECTIVITY; P-TYPE; RADIO FREQUENCY PLASMA; REFLECTANCE SPECTRA; SEM IMAGE; ULTRA-VIOLET; UV-VIS-NIR; WIDE STOP BAND;

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DEVICES; MULTILAYERS; OXIDE MINERALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; REFLECTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

MULTILAYER FILMS;

EID: 65649090255 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.03.121 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.