A Manufacturing grade, porous oxycarbosilane spin-on dielectric candidate with K 2.0

Journal of the Electrochemical Society

Volumn 158, Issue 7, 2011, Pages

  Volksen, Willi ^a   Magbitang, Teddie P ^a   Miller, Robert D ^a   Purushothaman, Sampath ^b   Cohen, Stephan A ^b   Nakagawa, Hisashi ^c   Nobe, Youhei ^c   Kokubo, Terukazu ^c   Dubois, Geraud J M ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c JSR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE GENERATION; DIELECTRIC CONSTANTS; FRACTURE RESISTANCE; HOMOPOLYMERS; INTEGRATION REQUIREMENTS; LONG-TERM SOLUTIONS; MICROELECTRONIC APPLICATIONS; ORGANOSILICATES; POROUS SYSTEM; SPIN-ON; SPIN-ON DIELECTRICS; SPIN-ON OXYCARBOSILANE; ULTRA LOW-K;

GELS; MANUFACTURE; MECHANICAL PROPERTIES; MICROELECTRONICS; SOL-GEL PROCESS; SOL-GELS; SOLS;

DIELECTRIC MATERIALS;

EID: 79957602604     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3591081     Document Type: Article

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