Ultra low-k films derived from hyperbranched polycarbosilanes (HBPCS)

Advanced Functional Materials

Volumn 18, Issue 24, 2008, Pages 4022-4028

  Rathore, Jitendra S ^a   Interrante, Leonard V ^a   Dubois, Geraud ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLOIDS; DIELECTRIC MATERIALS; GELATION; MECHANICAL PROPERTIES; OLEFINS; POLYSILANES; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SOL-GEL PROCESS;

DIELECTRIC CONSTANTS; HYPERBRANCHED; ORGANOSILOXANES; POLYCARBOSILANES; POROGEN; SOL - GELS; TEMPLATING;

DENDRIMERS;

EID: 57849126742     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200801197     Document Type: Article

References (22)

1. R. Rosenberg, D. C. Edelstein, C. K. Hu, K. P. Rodbell, Ann. Rev. Mater. Sci. 2000, 30, 229.
2. A. Grill, D. Edelstein, D. Restaino, M. Lane, S. Gates, E. Liniger, T. Shaw, X. H. Liu, D. Klaus, V. Patel, S. Cohen, E. Simonyi, N. Klymko, S. Lane, K. Ida, S. Vogt, T. van Kleeck, C. Davis, M. Ono, T. Nogami, T. Ivers, Optimization of SiCOH dielectrics for integration in a 90 nm CMOS technology, presented at Proc. 7th IEEE Int. Interconnect Technol Conf., Burlingame, CA, United States, June 7-9 2004.
3. G. Dubois, W. Volksen, R. D. Miller, in Dielectric Films for Advanced Microelectronics (Eds: M. Baklanov, K. Maex, M. Green), Wiley, New York 2007, p. 33.
4. Q. R. Huang, W. Volksen, E. Huang, M. Toney, C. W. Frank, R. D. Miller, Chem. Mater. 2002, 14, 3676.
5. B. Lee, W. Oh, Y. Hwang, Y.-H. Park, J. Yoon, K. S. Jin, K. Heo, J. Kim, K.-W. Kim, M. Ree, Adv. Mater. 2005, 17, 696.
6. B. Lee, Y.-H. Park, Y.-T. Hwang, W. Oh, J. Yoon, M. Ree, Nat. Mater. 2005, 4, 147.
7. C. V. Nguyen, K. R. Carter, C. J. Hawker, J. L. Hedrick, R. L. Jaffe, R. D. Miller, J. F. Remenar, H.-W. Rhee, P. M. Rice, M. F. Toney, M. Trollss, D. Y. Yoon, Chem. Mater. 1999, 11, 3080.
8. S. Yang, P. A. Mirau, C.-S. Pai, O. Nalamasu, E. Reichmanis, J. C. Pai, Y. S. Obeng, J. Seputro, E. K. Lin, H.-J. Lee, J. Sun, D. W. Gidley, Chem. Mater. 2002, 14, 369.
9. T. Abell, F. Iacopi, G. Prokopowicz, B. Sun, A. Mazurenko, Y. Travaly, M. Baklanov, A. Jonas, C. Sullivan, S. Brongersma, H.-C. Liou, J. Tower, M. Gostein, M. Gallagher, J. Calvert, M. Moinpour, K. Maex, Comparison of modulus and density measurements by nanoidentation, SAWS, XRR and EP techniques of a porous low k MSQ dielectric, presented at Proc. Adv. Met. Conf., 2004, San Diego, CA, United States, October 19-21, 2004 and Tokyo, Japan, September 28-29 2005.
10. A. Jain, S. Rogojevic, S. Ponoth, N. Agarwal, I. Matthew, W. N. Gill, P. Persans, M. Tomozawa, J. L. Plawsky, E. Simonyi, Thin Solid Films 2001, 398-399, 513.
11. G. Dubois, W. Volksen, T. Magbitang, R. D. Miller, D. M. Gage, R. H. Dauskardt, Adv. Mater. 2007, 19, 3989.
12. N. Lu, Ph.D. Thesis, Rensselaer Polytechnic Institute, Troy August 2004, pp.173
13. G. D. Soraru, Q. Liu, L. V. Interrante, T. Apple, Chem. Mater. 1998, 10, 4047.
14. L. V. Interrante, N. Lu, Application: US Patent 2003-339336 2004000715, 2004.
15. S. V. Nitta, Ph.D. Thesis, Rensselaer Polytechnic Institute, Troy 1998, 172 pp.
16. H. J. Cha, J. Hedrick, R. A. DiPietro, T. Blume, R. Beyers, D. Y. Yoon, Appl. Phys. Lett. 1996, 68, 1930.
17. J. Hedrick, J. Labadie, T. Russell, D. Hofer, V. Wakharker, Polymer 1993, 34, 4717.
18. J. L. Hedrick, R. D. Miller, C. J. Hawker, K. R. Carter, W. Volksen, D. Y. Yoon, M. Trollsas, Adv. Mater. 1998, 10, 1049.
19. G. Dubois, W. Volksen, T. Magbitang, M. H. Sherwood, R. D. Miller, D. M. Gage, R. H. Dauskardt, J. Sol-Gel Sci. Technol. 2008, 48, 187.
20. S. Lin, C. Jin, L. Lui, M. Tsai, M. Daniels, A. Gonzalez, J. T. Wetzel, K. A. Monnig, P. A. Winebarger, S. Jang, D. Yu, M. S. Liang, Low-k dielectrics characterization for damascene integration, presented at Proc. IEEE Int. Interconnect Technol. Conf., Burlingame, CA, United States, June 5-7 2001.
21. N. Tajima, T. Hamada, T. Ohno, K. Yoneda, N. Kobayashi, S. Hasaka, M. Inoue, First-principle molecular model of PECVD SiOCH film for the mechanical and dielectric property investigation, presented at Proc. IEEE Int. Interconnect Technol. Conf., Burlingame, CA, United States, June 5-7 2005.
22. G. Dubois, T. Magbitang, W. Volksen, E. Simonyi, R. D. Miller, New spin-on oxycarbosilane low-k dielectric materials with exceptional mechanical properties, presented at Proc. IEEE Int. Interconnect Technol. Conf., Burlingame, CA, United States, June 5-7 2005.