Low-k materials by design

Semiconductor International

Volumn 25, Issue 6, 2002, Pages 93-100

  O'Neill, Mark ^a   Lukas, Aaron ^a   Vrtis, Raymond ^a   Vincent, Jean ^a   Peterson, Brian ^a   Bitner, Mark ^a   Karwacki, Eugene ^a  

^a AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURE; INTERLAYER DIELECTRIC (ILD) MATERIALS; METHYL GROUP; ORGANOSILICATE GLASS (OSG) FILMS;

CHEMICAL BONDS; COMPUTER SIMULATION; ELASTIC MODULI; GLASS; HARDNESS; INTEGRATED CIRCUIT LAYOUT; MOLECULAR STRUCTURE; OPTIMIZATION; ORGANOMETALLICS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLARIZATION; POROSITY; SILICA; THERMAL EFFECTS;

DIELECTRIC MATERIALS;

EID: 0012627928     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

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