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Applied Physics Letters

Volumn 98, Issue 20, 2011, Pages

Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers

(5) Ščajev, Patrik a Usikov, Alexander b Soukhoveev, Vitali b Aleksiejnas, Ramnas a Jarašinas, Kstutis a

a VILNIUS UNIVERSITY (Lithuania)

b OXFORD INSTRUMENTS PLASMA TECHNOLOGY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR CARRIERS; COLUMNAR DEFECT; DIFFERENT THICKNESS; DIFFUSION COEFFICIENTS; DIFFUSION LIMITED; EXTENDED DEFECT; FREE CARRIER ABSORPTION; GAN LAYERS; HYDRIDE VAPOR PHASE EPITAXY; NON-RADIATIVE; NON-RADIATIVE LIFETIMES; NON-RADIATIVE RECOMBINATIONS; RECOMBINATION RATE; THREADING DISLOCATION DENSITIES; TIME-RESOLVED; TRANSIENT GRATING TECHNIQUE;

CARRIER LIFETIME; DEFECTS; GALLIUM NITRIDE; GRAIN BOUNDARIES; SEMICONDUCTING GALLIUM COMPOUNDS; VAPOR PHASE EPITAXY; VAPORS;

DIFFUSION;

EID: 79957540989 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3591173 Document Type: Article

Times cited : (29)

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