Large area GaN and AlN template substrates fabricated by HVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Soukhoveev, Vitali ^a   Volkova, Anna ^a   Ivantsov, Vladimir ^a   Kovalenkov, Oleg ^a   Syrkin, Alexander ^a   Usikov, Alexander ^a  

^a OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; COMMERCIAL PRODUCTS; CONDUCTIVE SILICON; CRACK FREE; DISLOCATION DENSITIES; FAST DEPOSITION; GAN LAYERS; GAN SUBSTRATE; GAN/SAPPHIRE; HYDRIDE VAPOUR PHASE EPITAXIES; SIC SUBSTRATES; SUBSTRATE MATERIAL; TEMPLATE SUBSTRATES; X RAY ROCKING CURVE; XRD;

CONDUCTIVE MATERIALS; GALLIUM NITRIDE; SAPPHIRE; SCREW DISLOCATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 78650604771     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880906     Document Type: Article

References (4)

1. O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov, and V. Dmitriev, J. Cryst. Growth 281, 87-92 (2005).
2. T. Kikkawa, K. Imanishi, M. Kanamura, and K. Joshin, IEICE Tech. Rep. 105(521), 45 (2006).
3. V. Dmitriev and A. Usikov, Compound Semicond. 10, 25 (2006).
4. C. Dunn and E. Koch, Acta Metall. 5, 548 (1957).