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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

Diffusion and recombination of degenerate carrier plasma in GaN

(5) Malinauskas, Tadas a Jarasiunas, Kestutis a Heuken, Michael b Scholz, Ferdinand c Brückner, Peter c

a VILNIUS UNIVERSITY (Lithuania)

b AIXTRON AG (Germany)

c UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; BIMOLECULAR RECOMBINATION; CARRIER DENSITY; CARRIER DIFFUSIONS; CARRIER DYNAMICS; CARRIER PLASMA; DENSITY DEPENDENT; DIFFUSION COEFFICIENTS; EXCITATION INTENSITY; INTENSE BANDS; LIGHT-INDUCED TRANSIENT GRATING TECHNIQUE; NUMERICAL MODELLING; STRUCTURAL QUALITIES;

CARRIER CONCENTRATION; DIFFUSION; GALLIUM ALLOYS; GALLIUM NITRIDE;

CARRIER LIFETIME;

EID: 77954578215 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200880856 Document Type: Article

Times cited : (22)

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