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Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

Fast and slow carrier recombination transients in highly excited 4H- and 3C-SiC crystals at room temperature

(4) Scajev P a Gudelis, V a Jarasinas K a Klein, P B b

a VILNIUS UNIVERSITY (Lithuania)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; BULK LIFETIME; CARRIER DYNAMICS; CARRIER EXCITATION; CARRIER PLASMA; CARRIER RECOMBINATION; DECAY KINETICS; EXCESS CARRIERS; EXCITATION CONDITIONS; EXCITATION LEVELS; FREE CARRIER ABSORPTION; HIGH DENSITY; INTERBAND; MEASUREMENT SETUP; NON-EQUILIBRIUM CARRIERS; NUMERICAL FITTING; NUMERICAL MODELING; PICOSECOND LASER PULSE; PROBE PULSE; ROOM TEMPERATURE; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; TEMPORAL RESOLUTION; TIME-RESOLVED;

AUGERS; CRYSTALS; LASER EXCITATION; PULSED LASER APPLICATIONS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955782253 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3459894 Document Type: Article

Times cited : (82)

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