Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers

Physica Status Solidi (B) Basic Research

Volumn 243, Issue 7, 2006, Pages 1426-1430

  Malinauskas, T ^a   Jarasiunas K ^a   Aleksiejunas, R ^a   Gogova, D ^b   Monemar, B ^b   Beaumont, B ^c   Gibart, P ^c  

^a VILNIUS UNIVERSITY   (Lithuania)

^b LINKÖPING UNIVERSITY   (Sweden)

^c LUMILOG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745744659     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200565139     Document Type: Conference Paper

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