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Zhou MS, Chan L, Tsai Y Forming residue free patterned poly:silicon on a high step height pattern - by patterning a deposited poly:silicon layer by anisotropic RIE and then removing residue by isotropic RIE using hydrogen bromide. Patent nos.: SG45519-A1; US5792708-A
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Zhou, M.S.1
Chan, L.2
Tsai, Y.3
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