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Volumn 22, Issue 2, 2009, Pages 305-316

Improvement of temperature coefficient of resistance by co-implantation of argon or xenon or fluorine in boron implanted polysilicon resistors

Author keywords

AFM; amorphization; atomic force microscope; co implantation; grain boundary; grains regrowth; P type polysilicon; rapid thermal anneal; recrystalization; RTP; sheet resistance; SRIM; TCR; temperature coefficient of resistance; thermawave; X ray diffractometer; XRD

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPE; CO-IMPLANTATION; GRAINS REGROWTH; P-TYPE POLYSILICON; RAPID THERMAL ANNEAL; RECRYSTALIZATION; RTP; SRIM; TCR; TEMPERATURE COEFFICIENT OF RESISTANCE; THERMAWAVE; X-RAY DIFFRACTOMETER; XRD;

EID: 67649352507     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2009.2017655     Document Type: Article
Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.