Ordered arrays of high-quality single-crystalline α-Si3N4 nanowires: Synthesis, properties and applications

Journal of Crystal Growth

Volumn 311, Issue 20, 2009, Pages 4486-4490

  Ahmad, Mashkoor ^a   Zhao, Jiong ^a   Pan, Caofeng ^a   Zhu, Jing ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Ordered arrays; A2. Crystalline; B1. Si3N4 nanowires

Indexed keywords

A1. ORDERED ARRAYS; A2. CRYSTALLINE; ELEMENTAL COMPOSITIONS; GROWTH MECHANISMS; HIGH QUALITY; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; I - V CURVE; I-V MEASUREMENTS; IN-SITU; ORDERED ARRAY; PL SPECTRA; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPES; SINGLE NW; SINGLE-CRYSTALLINE; VALENCE STATE; VISIBLE EMISSIONS; XPS;

COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC WIRE; ELECTRON MICROSCOPES; ELECTRON TRANSPORT PROPERTIES; EMISSION SPECTROSCOPY; INFRARED SPECTROSCOPY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON; SYNTHESIS (CHEMICAL); THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE MATERIALS;

EID: 70349400519     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.08.003     Document Type: Article

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