RF characterisation and transient behaviour of AlGaN/GaN power HFETs

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1442-1447

  Leier, Helmut ^a   Vescan, Andrei ^a   Dietrich, Ron ^a   Wieszt, Andreas ^a   Sledzik, Hardy Hans ^b  

^a DAIMLER AG   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

AlGaN GaN; HEMT; HFET; Microwave power

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; CURRENT VALUES; TRANSIENT BEHAVIOUR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035483080     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
2. Trap effects studies in GaN MESFETs by pulsed measurements
3. Effect of illumination on the electrical characteristics of AlGaN/GaN FETs
4. AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz
5. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
6. Large frequency dispersion of AlGaN/GaN heterostructure field effect transistors
7. Evidence of detrimental surface effects on GaAs power MESFETs
8. The role of surface passivation on undoped AlGaN/GaN HEMT's
9. Transient processes in AlGaN/GaN heterostructure field effect transistors
10. Current limitation after pinch-off in AlGaN/GaN FETs
11. Long time-constant trap effects in nitride-heterostructure field effect transistors