Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition

Applied Physics Letters

Volumn 80, Issue 13, 2002, Pages 2356-2358

  Bray, K R ^a   Gupta, A ^a   Parsons, G N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; CORRELATION LENGTHS; DIFFUSION LENGTH; EFFECT OF HYDROGEN; FRACTAL ANALYSIS; GROWTH PRECURSORS; HYDROGEN DILUTION; LOW-TEMPERATURE DEPOSITION; LOW-TEMPERATURE SILICONS; PRECURSOR DIFFUSION; SURFACE TRANSPORT;

ATOMIC FORCE MICROSCOPY; FRACTALS; HYDROGEN; HYDROGENATION; PLASMA DEPOSITION; SURFACE DIFFUSION; SURFACE TOPOGRAPHY;

AMORPHOUS SILICON;

EID: 79956009296     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467616     Document Type: Article

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