Recent understanding of the growth process of amorphous silicon from a silane glow-discharge plasma

Plasma Physics and Controlled Fusion

Volumn 39, Issue 5A, 1997, Pages

  Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; GLOW DISCHARGES; HYDROGEN BONDS; PLASMAS;

INFRARED LASER ABSORPTION SPECTROSCOPY; INFRARED REFLECTION ABSORPTION SPECTROSCOPY; PRECURSOR ASSISTED DEFECT SUPPRESSION; SILANE GLOW DISCHARGE PLASMA;

FILM GROWTH;

EID: 0031139173     PISSN: 07413335     EISSN: None     Source Type: Journal    
DOI: 10.1088/0741-3335/39/5A/040     Document Type: Article

References (8)

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4. Toyoshima T, Arai K, Matsuda A and Tanaka K 1990 Appl. Phys. Lett. 56 1540
5. Matsuda A, Nomoto K, Takeuchi Y, Suzuki A, Yuuki A and Perrin J 1990 Surface Sci. 227 50
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7. Ganguly G, Nishio H and Matsuda A 1994 Appl. Phys. Lett. 64 3581
8. Ganguly G and Matsuda A 1994 Mater. Res. Soc. Proc. 336 7