Evidence of swelling of SiO2 upon thermal annealing

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3075-3077

  Banerjee, S ^a   Chakraborty, S ^a   Lai, P T ^b  

^a SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; DISTORTED WAVE BORN APPROXIMATION; DRY OXIDATION; ELECTRON DENSITY PROFILES; GRAZING INCIDENCE X-RAY REFLECTIVITIES; MODEL INDEPENDENT; NUMBER OF ELECTRONS; SI (001) SUBSTRATE; STRUCTURAL CHARACTERIZATION; THERMAL-ANNEALING; ULTRA-THIN; WET OXIDATION; X RAY REFLECTIVITY;

BORN APPROXIMATION; CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; OXIDE FILMS; REFLECTION; SILICON COMPOUNDS; X RAYS;

INTERFACES (MATERIALS);

EID: 79955999136     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473863     Document Type: Article

References (23)

1. S. Banerjee, Y. J. Park, D. R. Lee, Y. H. Jeong, K.-B. Lee, S. B. Yoon, B. H. Jo, H. M. Choi, and W.-J. Cho, Appl. Phys. Lett. 72, 433 (1998). apl APPLAB 0003-6951
2. K. Taniguichi, M. Tanaka, C. Hamguchi, and K. Imai, J. Appl. Phys. 67, 2195 (1990). jap JAPIAU 0021-8979
3. B. Li, T. Fujimoto, and I. Kojima, J. Vac. Sci. Technol. A 17, 552 (1999). jva JVTAD6 0734-2101
4. B. J. Mrstik, V. V. Afanas'ev, A. Stesmans, P. J. McMarr, and R. K. Lawrence, J. Appl. Phys. 85, 6577 (1999). jap JAPIAU 0021-8979
5. W. K. Choi, C. K. Choo, K. K. Han, J. H. Chen, F. C. Loh, and K. L. Tan, J. Appl. Phys. 83, 2308 (1998). jap JAPIAU 0021-8979
6. S. Banerjee, M. K. Sanyal, A. Datta, S. Kanakaraju, and S. Mohan, Phys. Rev. B 54, 16377 (1996). prb PRBMDO 0163-1829
7. M. K. Sanyal, J. K. Basu, A. Datta, and S. Banerjee, Europhys. Lett. 36, 265 (1996). eul EULEEJ 0295-5075
8. S. Banerjee, A. Datta, and M. K. Sanyal, Vacuum 60, 371, (2001). vac VACUAV 0042-207X
9. M. Matsumura, T. Sakoda, and Y. Nishioka, Jpn. J. Appl. Phys., Part 1 37, 5963 (1998). jjb JAPNDE 0021-4922
10. N. Awaji, Y. Sugita, T. Nakanishi, S. Ohkubo, K. Takasaki, and S. Komiya, J. Vac. Sci. Technol. A 14, 971 (1996). jva JVTAD6 0734-2101
11. S. M. Heald, J. K. D. Jayanetti, A. A. Bright, and G. W. Rubloff, J. Vac. Sci. Technol. A 8, 2046 (1990). jva JVTAD6 0734-2101
12. S. D. Kosowsky, P. S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman, and P. K. Roy, Appl. Phys. Lett. 70, 3119 (1997). apl APPLAB 0003-6951
13. L. G. Parratt, Phys. Rev. 131, 359 (1954). phr PHRVAO 0031-899X
14. S. Banerjee, A. Gibaud, D. Chateigner, S. Ferrari, and M. Fanciulli, J. Appl. Phys. 91, 540 (2002); jap JAPIAU 0021-8979
15. S. Banerjee, A. Gibaud, D. Chateigner, S. Ferrari, C. Wiemer, and D. T. Dekadjevi, Appl. Phys. Lett. 80, 512 (2002). apl APPLAB 0003-6951
16. M. Li, M. O. Moller, and G. Landwehr, J. Appl. Phys. 80, 2788 (1996). jap JAPIAU 0021-8979
17. S. Banerjee, G. Raghavan, and M. K. Sanyal J. Appl. Phys. 85, 7135 (1999). jap JAPIAU 0021-8979
18. J. Daillant and A. Gibaud, X-ray and Neutron Reflectivity: Principles and Applications, Lecture Notes in Physics (Springer, Berlin, 1999), Chap. 3, p. 87.
19. M. K. Sanyal, S. K. Sinha, A. Gibaud, K. G. Huang, B. L. Carvalho, M. Rafailovich, J. Sokolov, X. Zhao, and W. Zhao, Europhys. Lett. 21, 691 (1993). eul EULEEJ 0295-5075
20. X.-L. Zhou and S. H. Chen, Phys. Rep. 257, 233 (1995). prp PRPLCM 0370-1573
21. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Harcourt Singapore, 1976), Chap. 1, p. 4.
22. A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, Phys. Rev. Lett. 59, 213 (1987). prl PRLTAO 0031-9007
23. P. H. Fuoss, L. J. Norton, S. Bernnan, and A. Fischer-Colbrie, Phys. Rev. Lett. 60, 600 (1988). prl PRLTAO 0031-9007