Interfacial layer in thermally-grown ultra thin silicon dioxides measured by grazing incidence X-ray reflection

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5963-5964

  Matsumura, Mieko ^a,b   Sakoda, Tomoyuki ^a   Nishioka, Yasushiro ^a  

^a Texas Instruments Japan Ltd   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Film density; Interfacial layer; Silicon dioxide; Thermal annealing; X ray reflectivity

Indexed keywords

ANNEALING; DENSITY (SPECIFIC GRAVITY); ELECTROMAGNETIC WAVE REFLECTION; OXIDATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS; THERMAL EFFECTS; ULTRATHIN FILMS; X RAY ANALYSIS;

GRAZING INCIDENCE X RAY REFLECTION (GIXR) ANALYSIS; POST-OXIDATION ANNEALING (POA);

SEMICONDUCTOR JUNCTIONS;

EID: 0032205789     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5963     Document Type: Article

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