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Applied Physics Letters

Volumn 72, Issue 4, 1998, Pages 433-435

Effects of oxidation process on interface roughness of gate oxides on silicon: X-ray reflectivity study

(9) Banerjee, S a Park, Y J a Lee, D R b Jeong, Y H b Lee, K B b Yoon, S B c Jo, B H c Choi, H M c Cho, W J c

a POSTECH (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

c Hynix Semiconductor Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001566694 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120780 Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.