Resolution-linewidth roughness-sensitivity performance tradeoffs for an extreme ultraviolet polymer bound photo-acid generator resist

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 10, Issue 1, 2011, Pages

  Gronheid, Roel ^a   Pret, Alessandro Vaglio ^a   Rathsack, Benjamen ^b   Hooge, Joshua ^b   Scheer, Steven ^b   Nafus, Kathleen ^c   Shite, Hideo ^c   Kitano, Junichi ^c  

^a IMEC   (Belgium)

^b TOKYO ELECTRON AMERICA INC   (United States)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

extreme ultraviolet; linewidth roughness; lithography simulation; resist sensitivity; resolution

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; EXPERIMENTS; LINEWIDTH; LOADING; PHOTORESISTORS; PHOTORESISTS; POLYMERS; SECONDARY EMISSION;

EXTREME ULTRAVIOLET; LINEWIDTH ROUGHNESS; LITHOGRAPHY SIMULATION; RESIST SENSITIVITY; RESOLUTION;

QUANTUM EFFICIENCY;

EID: 79955962989     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.3555090     Document Type: Conference Paper

References (17)

1. T. Kozawa, S. Tagawa, H. Oizumi, and I. Nishiyama, Acid generation efficiency in a model system of chemically amplified extreme ultraviolet resist., J. Vac. Sci. Technol. B 24 (6), L27-L30 (2006). 10.1116/1.2393297 (Pubitemid 44866511)
2. E. S. Putna, T. R. Younkin, M. Chandhok, and K. Frasure, EUV lithography for 30 nm HP and beyond: Exploring resolution, sensitivity and LWR tradeoffs., Proc. SPIE 7273, 72731L (2009). 10.1117/12.814191
3. B. Rathsack, K. Nafus, S. Hatakeyama, Y. Kuwahara, J. Kitano, R. Gronheid, and A. Vaglio Pret, Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects., Proc. SPIE 7273, 727347 (2009). 10.1117/12.814287
4. R. A. Lawson, C.-T. Lee, W. Yueh, L. Tolbert, and C. L. Henderson, Mesoscale simulation of molecular glass photoresists: effect of PAG loading and acid diffusion coefficient., Proc. SPIE 6923, 69230Q (2008). 10.1117/12.773570
5. J. Biafore, M. Smith, C. Mack, J. Thackeray, R. Gronheid, S. Robertson, T. Graves, and D. Blankenship, Statistical simulation of photoresists at EUV and ArF., Proc. SPIE 7273, 727343 (2009). 10.1117/12.813551
6. R. D. Allen, P. J. Brock, Y.-H. Na, M. H. Sherwood, H. D. Truong, G. M. Wallraff, M. Fujiwara, and K. Maeda, Investigation of polymer-bound PAGs: Synthesis, characterization and initial structureproperty relationships of anion-bound resists., J. Photopolym. Sci. Technol. 22 (1), 25-29 (2009). 10.2494/photopolymer.22.25
7. E. Gullikson, X-ray interactions with matter. (2010), http://henke.lbl.gov/optical-constants/.
8. S. Irie, M. Endo, M. Sasago, N. Kandaka, H. Kondo, and K. Murakami, Measurement of resist transmittance at extreme ultraviolet wavelength using the extreme ultraviolet reflectometer., Jpn. J. Appl. Phys. 41 (9), 4027-4030 (2002). 10.1143/JJAP.41.4027 (Pubitemid 34962257)
9. F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, Characterization of positive photoresist., IEEE Trans. Electron Devices 22 (7), 445-452 (1975); It should be noted that in this case for a chemically amplified resist Dill-C is a measure for the efficiency of acid generation. In the original definition it is a measure for bleaching. In both cases it refers to the efficiency of the primary photoreaction. 10.1109/T-ED.1975.18159
10. M. Kasha, Characterization of electronic transitions in complex molecules., Discuss. Faraday Soc. 9, 14-19 (1950). 10.1039/df9500900014
11. D. J. Guerrero, H. Xu, R. Mercado, and J. Blackwell, Underlayer designs to enhance EUV resist performance., J. Photopolym. Sci. Technol. 22 (1), 117-122 (2009). 10.2494/photopolymer.22.117
12. D. Van Steenwinckel, R. Gronheid, J. H. Lammers, A. M. Myers, F. Van Roey, and P. Willems, A novel method for characterizing resist performance., Proc. SPIE 6519, 65190V (2007). 10.1117/12.712861 (Pubitemid 47551050)
13. T. Kozawa, S. Tagawa, H. B. Cao, H. Deng, and M. J. Leeson, Acid distribution in chemically amplified extreme ultraviolet resist., J. Vac. Sci. Technol. B 25 (6), 2481-2485 (2007). 10.1116/1.2794063 (Pubitemid 350255922)
14. T. Kozawa, S. Tagawa, T. Kai, and T. Shimokawa, Sensitization distance and acid generation efficiency in a model system of chemically amplified electron beam resist with methacrylate backbone polymer., J. Photopolym. Sci. Technol. 20 (4), 577-583 (2007). 10.2494/photopolymer.20.577
15. R. Gronheid, B. Rathsack, S. Bernard, A. Vaglio Pret, K. Nafus, and S. Hatakeyama, Effect of PAG distribution on ArF and EUV resist performance., J. Photopolym. Sci. Technol. 22 (1), 97-104 (2009). 10.2494/photopolymer.22.97
16. T. Itani, H. Oizumi, K. Kaneyama, D. Kawamura, S. Kobayashi, and J. J. Santillan, Advancements in EUV resist materials and processing., J. Photopolym. Sci. Technol. 22 (1), 59-64 (2009). 10.2494/photopolymer.22.59
17. C. A. Mack, Inside PROLITH - A Comprehensive Guide to optical Lithography Simulation, pp. 110-111, FINLE Technologies, Austin, Texas (1997).