Local electrical characterization of laser-recorded phase-change marks on amorphous Ge2Sb2Te5 thin films

Optics Express

Volumn 19, Issue 10, 2011, Pages 9492-9504

  Chang, Chia Min ^a   Chu, Cheng Hung ^a,b   Tseng, Ming Lun ^a   Chiang, Hai Pang ^b,c,d   Mansuripur, Masud ^a,e   Tsai, Din Ping ^a,c,d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^d INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^e UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ATOMIC FORCE MICROSCOPY; CHALCOGENIDES; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; GERMANIUM; GOLD COATINGS; LASER BEAMS; PHASE CHANGE MEMORY; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

ABLATED HOLES; AMORPHOUS THIN FILMS; ATOMIC FORCE MICROSCOPES; CHALCOGENIDE FILMS; CRYSTALLINE ZONES; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTIVITY; EXTRACTING INFORMATION; FOCUSED LASER BEAMS; GOLD ELECTRODES; HIGH CONDUCTIVITY; HIGH DENSITY MEMORY; HIGH RESOLUTION; HIGH-SENSITIVITY; LASER CRYSTALLIZATION; MODERN TECHNOLOGIES; MULTIRING; NANO SCALE; PHASE CHANGES; RESEARCH AND DEVELOPMENT;

AMORPHOUS FILMS;

EID: 79955817467     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.009492     Document Type: Article

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