Pulse number control of electrical resistance for multi-level storage based on phase change

Journal of Physics D: Applied Physics

Volumn 40, Issue 17, 2007, Pages 5061-5065

  Nakayama, K ^a   Takata, M ^a   Kasai, T ^a   Kitagawa, A ^a   Akita, J ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SEMICONDUCTORS; CHALCOGENIDES; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; NONVOLATILE STORAGE; PULSE CIRCUITS; SELENIUM COMPOUNDS; THIN FILMS;

CHALCOGENIDE SEMICONDUCTOR; ELECTRIC PULSES; MEMORY CELL; PHASE CHANGE NONVOLATILE MEMORY DEVICES; PULSE NUMBER CONTROL;

PHASE CHANGE MEMORY;

EID: 34548665467     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/17/009     Document Type: Article

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