Electronic and atomic structure of Ge2Sb2Te5 phase change memory material

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7538-7541

  Robertson, J ^a   Xiong, K ^a   Peacock, P W ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Amorphous; Chalcogens; Electronic structure; Phase transitions

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; PHASE CHANGE MATERIALS;

CONDUCTION PROCESSES; NONVOLATILE MEMORIES; SUPPORT VALENCE ALTERNATION PAIR DEFECTS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 34547601591     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.159     Document Type: Article

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