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Applied Physics A: Materials Science and Processing

Volumn 84, Issue 1-2, 2006, Pages 21-25

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

(8) Lai, Y F a Feng, J a Qiao, B W a Cai, Y F b Lin, Y Y b Tang, T A b Cai, B C a Chen, B c

a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

b FUDAN UNIVERSITY (China)

c SILICON STORAGE TECHNOLOGY INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM COMPOUNDS; PHASE SHIFT; SILICON;

MULTI-STATE STORAGE CAPABILITY; PHASE CHANGE MEMORY; RESISTANCE-VOLTAGE (R-V) CURVE;

THIN FILMS;

EID: 33646695030 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3571-7 Document Type: Article

Times cited : (44)

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