Nanoscale bit formation in highly (111)-oriented ferroelectric thin films deposited on glass substrates for high-density storage media

Nanotechnology

Volumn 22, Issue 24, 2011, Pages

  Kim, Dae Hong ^a   Kim, Yong Kwan ^b   Hong, Seungbum ^c   Kim, Yunseok ^d,e   Baik, Sunggi ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; FERROELECTRIC POLARIZATION; FERROELECTRIC PROPERTY; GLASS SUBSTRATES; HIGH-DENSITY; NANO SCALE; PIEZORESPONSE FORCE MICROSCOPY; POTENTIAL RECORDING; PT(111); ROOT MEAN SQUARE ROUGHNESS; SMOOTH SURFACE; STORAGE DEVICES; STORAGE MEDIA;

DEPOSITION; DIFFRACTION; FERROELECTRIC THIN FILMS; FERROELECTRICITY; GLASS LASERS; PLATINUM; PULSED LASER DEPOSITION; SUBSTRATES; VIRTUAL STORAGE; X RAY DIFFRACTION;

FERROELECTRIC FILMS;

EID: 79955800845     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/24/245705     Document Type: Article

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