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Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Noninvasive metal contacts in chemically derived graphene devices

(5) Sundaram, Ravi S a Gomez Navarro, Cristina a,b Lee, Eduardo J H a Burghard, Marko a Kern, Klaus a,c

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

c EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE ANNEALING; ELECTRICAL TRANSPORT MEASUREMENTS; FABRICATED DEVICE; GOLD CONTACTS; GRAPHENE DEVICES; METAL CONTACTS; P-TYPE DOPING; POTENTIAL BARRIERS; TRANSFER CHARACTERISTICS;

DIFFUSION BARRIERS; ELECTRIC PROPERTIES; NUCLEAR PHYSICS; SHEET METAL;

GRAPHITE;

EID: 71949095897 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3270533 Document Type: Article

Times cited : (16)

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