Investigation of surface sputtering and post annealing effects on atomic layer deposited HfO2 and TiO2

IEEE Transactions on Semiconductor Manufacturing

Volumn 24, Issue 2, 2011, Pages 139-144

  Tao, Qian ^a   Jursich, Gregory M ^b   Takoudis, Christos ^a  

^a University of Illinois at Chicago   (United States)

^b University of Illinois at Chicago   (United States)

Author keywords

Ar+ sputtering; atomic layer deposition; dielectric

Indexed keywords

AL-METAL; AR+ SPUTTERING; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; CARBON IMPURITIES; CHEMICAL STATE; CURRENT-VOLTAGE MEASUREMENTS; DECOMPOSITION TEMPERATURE; DIELECTRIC; DIELECTRIC CONSTANTS; DIELECTRIC LAYER; ELECTRON BEAM EVAPORATION; FILM CRYSTALLINITY; GRAZING INCIDENCE X-RAY DIFFRACTION; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL OXIDES; METAL PRECURSOR; OPTICAL PROFILING; OXIDATION STATE; PHASE SHIFTING INTERFEROMETRY; POST DEPOSITION ANNEALING; POST-ANNEALING EFFECT; SILICON (100); SURFACE CONTAMINANTS; SURFACE SPUTTERING; TEMPERATURE RANGE; TEMPERATURE WINDOW; TETRAKIS; TIO;

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMS; CARBON FILMS; ELECTRON BEAMS; HAFNIUM; HAFNIUM COMPOUNDS; IMPURITIES; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; OPTIMIZATION; SURFACE MORPHOLOGY; TITANIUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ARGON;

EID: 79955661360     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2011.2106167     Document Type: Conference Paper

References (27)

1. T. Suntola, "Atomic layer epitaxy", Thin Solid Films, vol. 216, p. 84, 1992.
2. R. G. Gordon, D. Hausmann, E. Kim, and J. Shepard, "A kinetic model for step coverage by atomic layer deposition in narrow holes or trenches", Chem. Vap. Deposition, vol. 9, no. 2, p. 73, 2003.
3. M. Leskelä and M. Ritala, "Atomic layer deposition (ALD): From precursors to thin film structures", Thin Solid Films, vol. 409, p. 138, Apr. 2002.
4. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gate dielectrics: Current status and materials properties considerations", J. Appl. Phys., vol. 89, no. 10, p. 5243, 2001. (Pubitemid 32492094)
5. International Technology Roadmap for Semiconductors. (2007) [Online]. Available: http://www.itrs.net/links/2007itrs/home2007.htm
6. B. Sen, B. L. Yang, H. Wong, C. Kok, P. K. Chu, and A. Huang, "Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation", Microelectron. Reliab., vol. 48, nos. 11-12, p. 1765, 2008.
7. C. C. Fulton, G. Lucovsky, and R. J. Nemanich, "Electronic states at the interface of Ti-Si oxide on Si (100)", J. Vac. Sci. Technol. B, vol. 20, p. 1726, 2002.
8. Q. Tao, G. Jursich, P. Majumder, M. Singh, W. Walkosz, P. Gu, R. Klie, and C. Takoudis, "Composition-structure-dielectric property of yttriumdoped hafnium oxide films deposited by atomic layer deposition", Electrochem. Solid-State Lett., vol. 12, no. 9, p. G50, 2009.
9. C. E. Talor, S. D. Garvey, and J. E. Pemberton, "Carbon contamination at silver surfaces: Surface preparation procedures evaluated by Raman spectroscopy and X-ray photoelectron spectroscopy", Anal. Chem., vol. 68, p. 2401, 1996.
10. E. Strein and D. Allred, "Eliminating carbon contamination on oxidized Si surfaces using a VUV excimer lamp", Thin Solid Films, vol. 517, p. 1011, 2008.
11. A. Thedsakhulwong and W. Thowladda, "Removal of carbon contamination on silicon wafer surfaces by microwave oxygen plasma", J. Metals Mater. Minerals, vol. 18, p. 137, 2008.
12. Y.-L. Wu, "The impact of implantation sequence on the characterization of n-MOSFETs with gate oxide grown on nitrogen-implanted Si substrate", Solid-State Electron., vol. 46, no. 7, p. 1241, 2002.
13. P. Majumder, G. Jursich, A. Kueltzo, and G. C. Takoudis, "Atomic layer deposition of Y2O3 films on silicon using tris (ethylcyclopentadienyl) yttrium precursor and water vapor", J. Electrochem. Soc., vol. 155, p. G152, 2008.
14. H. S. Nalwa, Handbook of Thin Film Materials. Millbrae, CA: Academic Press, 2002, p. 141.
15. L. Wang, P. K. Chu, A. Anders, and N. W. Cheung, "Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films", J. Appl. Phys., vol. 104, no. 4, p. 054117, 2008.
16. R. Tan, Y. Azuma, and I. Kojima, "Comparative study of the interfacial characteristics of sputter-deposited HfO2 on native SiO2/Si (100) using in situ XPS, AES and GIXR", Surf. Interface Anal., vol. 38, p. 784, 2006.
17. S. J. Kerber, J. J. Bruckner, K. Wozniak, S. Seal, S. Hardcastle, and T. L. Barr, "The nature of hydrogen in x-ray photoelectron spectroscopy: General patterns from hydroxides to hydrogen bonding", J. Vac. Sci. Technol. A, vol. 14, p. 1314, 1996.
18. Z. Lin, I.-S. Lee, Y.-J. Choi, I.-S. Noh, and S.-M. Chung, "Characterizations of the TiO (2-x) films synthesized by e-beam evaporation for endovascular applications", Biomed. Mater., vol. 4, p. 015013, 2009.
19. P. Osiceanu, "An XPS study on ion beam induced oxidation of titanium silicide", Appl. Surf. Sci., vol. 253, p. 381, 2006.
20. S. Hashimoto, K. Hirokawa, Y. Fukuda, K. Suzuki, T. Suzuki, N. Usuki, N. Gennai, S. Yoshida, M. Koda, H. Sezaki, H. Horie, A. Tanaka, and T. Ohtsubo, "Correction of peak shift and classification of change of x-ray photoelectron spectra of oxides as a result of ion sputtering", Surf. Interface Anal., vol. 18, p. 799, 1992.
21. U. Bardi, K. Tamura, M. Owari, and Y. Nihei, "Angular resolved xray photoemission study of defects induced by ion bombardment on the titania surface", Appl. Surf. Sci., vol. 32, p. 352, 1988.
22. S. Hofmann and J. M. Scaz, "Quantitative XPS analysis of the surface layer of anodic oxides obtained during depth profiling by sputtering with 3-keV argon (1+) ions", J. Trace Microprobe Tech., vol. 1, no. 213, pp. 1982-1983, 1983.
23. P. R. McCurdy, L. J. Sturgess, S. Kohli, and E. R. Fisher, "Investigation of the PECVD TiO2-Si (1 0 0) interface", Appl. Surf. Sci., vol. 233, p. 69, 2004.
24. S. Hashimoto and A. Tanaka, "Alteration of Ti 2p XPS spectrum for titanium oxide by low-energy Ar ion bombardment", Surf. Interface Anal., vol 34, p. 262, 2002.
25. D. Martínez-Martínez, J. C. Sánchez-López, T. C. Rojas, A. Fernández, P. Eaton, and M. Belin, "Structural and microtribological studies of Ti-C-N based nanocomposite coatings prepared by reactive sputtering", Thin Solid Films, vol. 472, p. 64, 2005.
26. M. K. Lee, J. J. Huang, and T. S. Wu, "Electrical characteristics improvement of oxygen-annealed MOCVD-TiO2 films", Semicond. Sci. Technol., vol. 20, p. 519, 2005.
27. T. Asuha, T. Kobayashi, O. Maida, M. Inoue, M. Takahashi, Y. Todokoro, and H. Kobayashi, "Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si", Appl. Phys. Lett., vol. 81, no. 18, p. 3410, Oct. 2002. (Pubitemid 35360478)