The impact of implantation sequence on the characterization of n-MOSFET's with gate oxide grown on nitrogen-implanted Si substrate

Solid-State Electronics

Volumn 46, Issue 8, 2002, Pages 1241-1245

  Wu, You Lin ^a  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

Hot carrier; Nitrogen implantation; Threshold voltage adjustment

Indexed keywords

BORON; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

GATE OXIDES;

MOSFET DEVICES;

EID: 0036680226     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00018-7     Document Type: Article

References (10)

1. Simultaneous growth of different thickness gate oxides in silicon CMOS processing
2. High performance 0.2 μm CMOS with 25 Å gate oxide grown on nitrogen implanted Si substrates
3. Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates
4. Channel engineering in sub-quarter-micron MOSFET's using nitrogen implantation for low voltage operation
5. Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
6. 2 ion implantation before gate oxide growth in deep submicron NMOS devices
7. Reduced electron mobility due to nitrogen implant prior to the gate oxide growth
8. 2 oxides by direct nitrogen implantation into silicon