High electron mobility germanium MOSFETs: Effect of n-type channel implants and ozone surface passivation

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 257-258

  Hennessy, J ^a   Antomadis, D A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CHARACTERISTICS; CHANNEL IMPLANTS; HIGH ELECTRON MOBILITY; INTERFACE STATE; MOSFETS; N-CHANNEL; NMOSFETS; PEAK MOBILITY; POOR PERFORMANCE; SUBTHRESHOLD SLOPE; SURFACE PASSIVATION;

ELECTRON MOBILITY; GERMANIUM; MOSFET DEVICES; OZONE;

PASSIVATION;

EID: 76549118512     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354921     Document Type: Conference Paper

References (3)

1. D. Kuzum et al, IEDM Tech. Dig., p.723, 2007.
2. R. Xie et al, IEDM Tech. Dig., p393, 2008.
3. A. Ritenour et al, EDZ, v28, n8, p746, 2007.