Implanted impurities in wide band gap semiconductors

Defect and Diffusion Forum

Volumn 311, Issue , 2011, Pages 167-179

  Kessler, P ^a   Lorenz, K ^b   Vianden, R ^a  

^a UNIVERSITY OF BONN   (Germany)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Annealing behavior; GaN; II VI compound; PAC; ZnO nitride semicoductors

Indexed keywords

ALUMINUM NITRIDE; CORRELATION METHODS; CRYSTAL ATOMIC STRUCTURE; DEFECTS; ENERGY GAP; GALLIUM ARSENIDE; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; IMPURITIES; INDIUM ALLOYS; INDIUM COMPOUNDS; ION IMPLANTATION; MAGNETIC SEMICONDUCTORS; NITRIDES; OXIDE SEMICONDUCTORS; PHOTONIC BAND GAP; PHOTONIC DEVICES; PICTURE ARCHIVING AND COMMUNICATION SYSTEMS; RADIATION DAMAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DOPING; ZINC OXIDE; ZINC SULFIDE;

ANNEALING BEHAVIOR; HIGH TEMPERATURE ELECTRONIC DEVICES; II-VI COMPOUNDS; IMPLANTATION TECHNIQUE; NITRIDE SEMICONDUCTORS; PERTURBED ANGULAR CORRELATION TECHNIQUE; QUATERNARY ALLOYS; WURTZITE LATTICE;

WIDE BAND GAP SEMICONDUCTORS;

EID: 79955387003     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.311.167     Document Type: Article

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