Recovery of structural defects in GaN after heavy ion implantation

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 407-412

  Ronning, C ^a   Dalmer, M ^a   Deicher, M ^a   Restle, M ^a   Bremser, M D ^a   Davis, R P ^a   Hofsass, H ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; INDIUM; ION IMPLANTATION; IONS; NITRIDES; RADIOISOTOPES; SEMICONDUCTOR DOPING;

EMISSION CHANNELING TECHNIQUE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030658515     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)