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Volumn 87, Issue 5, 2000, Pages 2149-2157

Ion implanted dopants in GaN and AIN: Lattice sites, annealing behavior, and defect recovery

(10) Ronning, C a Dalmer, M a Uhrmacher, M a Restle, M a Vetter, U a Ziegeler, L a Hofsass H a Gehrke, T b Jarrendahl K b,c Davis, R F b

a UNIVERSITY OF GÖTTINGEN (Germany)

b North Carolina State University (United States)

c LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346356027 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.372154 Document Type: Article

Times cited : (52)

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