Annealing behaviour of GaN after implantation with hafnium and indium

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 331-335

  Boulanger, D ^a   Parrot, R ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b UNIVERSITÉ DES ANTILLES ET DE LA GUYANE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541104     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200006)219     Document Type: Article

References (11)

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