Formation of 117In-H pairs after annealing of GaN implanted with 117Cd(117In)

Nuclear Physics A

Volumn 701, Issue 1-4, 2002, Pages 240-243

  Dietrich, M ^a   Deicher, M ^b   Stotzler A ^a   Weissenborn, R ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b CERN   (Switzerland)

Author keywords

Annealing; GaN; H; Ion implantation; PAC

Indexed keywords

EID: 0037156408     PISSN: 03759474     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9474(01)01589-5     Document Type: Article

References (6)