PAC investigations of radiation damage annealing in 111In implanted ZnO

Optical Materials

Volumn 31, Issue 10, 2009, Pages 1443-1447

  Dogra, R ^a   Byrne, A P ^b   Ridgway, M C ^b  

^a BEANT COLLEGE OF ENGINEERING AND TECHNOLOGY   (India)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Perturbed angular correlation; Radiation damage; Recoil implantation; ZnO

Indexed keywords

ANNEALING; ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; HEAVY IONS; II-VI SEMICONDUCTORS; INTERNAL OXIDATION; MAGNETIC MOMENTS; NITROGEN; NUCLEAR REACTIONS; POSITIVE IONS; PROBES; RADIATION DAMAGE; SINGLE CRYSTALS; ZINC OXIDE;

ELECTRIC QUADRUPOLE INTERACTIONS; NUCLEAR ELECTRIC QUADRUPOLE MOMENT; PERTURBED ANGULAR CORRELATION; PERTURBED ANGULAR CORRELATION TECHNIQUE; QUADRUPOLE INTERACTION FREQUENCIES; RECOIL IMPLANTATION; SIMPLE POINT CHARGE MODELS; SUBSTITUTIONAL INCORPORATION;

ION IMPLANTATION;

EID: 67650924820     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2009.01.014     Document Type: Article

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