Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf

Hyperfine Interactions

Volumn 177, Issue 1-3, 2007, Pages 89-95

  Lorenz, K ^a,b   Geruschke, T ^c   Alves, E ^a,b   Vianden, R ^c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF BONN   (Germany)

Author keywords

GaN; Implantation; Nitrides; Perturbed angular correlation

Indexed keywords

EID: 54249114895     PISSN: 03043843     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10751-008-9708-7     Document Type: Article

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