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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 96-100

Annealing of ion-implanted GaN

(5) Burchard, A a Haller, E E b Stotzler A a Weissenborn, R a Deicher, M a

a UNIVERSITY OF KONSTANZ (Germany)

b No 1760 (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CRYSTAL DEFECTS; EMISSION SPECTROSCOPY; ION IMPLANTATION; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033341170 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00415-9 Document Type: Article

Times cited : (3)

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