Using synchrotron light to accelerate EUV resist and mask materials learning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7985, Issue , 2011, Pages

  Naulleau, Patrick ^a   Anderson, Christopher N ^a   Baclea An, Lorie Mae ^a   Denham, Paul ^a   George, Simi ^a   Goldberg, Kenneth A ^a   Jones, Gideon ^a   McClinton, Brittany ^b   Miyakawa, Ryan ^b   Mochi, Iacopo ^a   Montgomery, Warren ^c   Rekawa, Seno ^a   Wallow, Tom ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SEMATECH   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

Extreme ultraviolet; Lithography; Mask cleaning; Mask roughness; Nanolithography; Photoresist

Indexed keywords

ACTINIC INSPECTION; ADVANCED LIGHT SOURCE; ADVANCED RESEARCHES; CHEMICALLY AMPLIFIED RESIST; COMMERCIAL TOOLS; CORRELATION LENGTHS; EUV RESISTS; EXPOSURE TOOL; EXTREME ULTRAVIOLET; LAWRENCE BERKELEY NATIONAL LABORATORY; LINE EDGE ROUGHNESS; LONG TERM; LOSSLESS; MASK CLEANING; MASK MATERIALS; MASK ROUGHNESS; NEW RESULTS; NUMERICAL APERTURE; RESOLUTION CAPABILITY; RESOLUTION LIMITS; SEMATECH; SPIN-ON HARD MASKS; SYNCHROTRON LIGHT; UNDULATOR RADIATION;

ELECTRON BEAM LITHOGRAPHY; LIGHT SOURCES; NANOLITHOGRAPHY; PHOTORESISTS; SYNCHROTRON RADIATION; SYNCHROTRONS;

EQUIPMENT;

EID: 79955164080     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.885420     Document Type: Conference Paper

References (17)

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