Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun

Journal of Electron Microscopy

Volumn 60, Issue 2, 2011, Pages 109-116

  Kim, Suhyun ^a   Oshima, Yoshifumi ^b   Sawada, Hidetaka ^c   Kaneyama, Toshikatsu ^c   Kondo, Yukihito ^c   Takeguchi, Masaki ^d   Nakayama, Yoshiko ^d   Tanishiro, Yasumasa ^a   Takayanagi, Kunio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c JEOL LTD   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

aberration correction; HAADF; quantitative analysis; silicon; STEM; Z contrast

Indexed keywords

CONVOLUTION; ELECTRONS; FIELD EMISSION; GAUSSIAN DISTRIBUTION; PROBES; TRANSMISSION ELECTRON MICROSCOPY;

ABERRATION CORRECTION; COLD FIELD EMISSIONS; DARK-FIELD; ELECTRON MICROSCOPE IMAGES; FIELD EMISSION GUNS; HAADF; SAMPLE THICKNESS; SCANNING TRANSMISSION ELECTRON MICROSCOPES; STEM; Z CONTRASTS;

SILICON;

EID: 79955017189     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfq084     Document Type: Article

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