Evidence for a New Class of Defects in Highly n-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes

Physical Review Letters

Volumn 91, Issue 12, 2003, Pages 1255051-1255054

  Voyles, P M ^a,d   Chadi, D J ^b   Citrin, P H ^a   Muller, D A ^a   Grazul, J L ^a   Northrup, P A ^a   Gossmann, H J L ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b NEC LABORATORIES AMERICA   (United States)

^c AGERE SYSTEMS   (United States)

^d UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; DIFFUSION; DOPING (ADDITIVES); IMPURITIES;

INTERSTITIAL COMPLEXES;

SILICON;

EID: 0142219834     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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