SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 8, 2010, Pages

A dopant cluster in a highly antimony doped silicon crystal

(9) Kim, Suhyun a Oshima, Yoshifumi a,b Sawada, Hidetaka b,c Hashikawa, Naoto d Asayama, Kyoichiro d Kaneyama, Tosikatu b,c Kondo, Yukihito b,c Tanishiro, Yasumasa a,b Takayanagi, Kunio a,b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c Japan Electron Optics Laboratory System and Technology Co (Japan)

d RENESAS TECHNOLOGY CORP (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY ATOMS; CONVERGENT BEAMS; CRITICAL VALUE; DEPTH OF FIELD; DOPANT CLUSTERS; DOPANT CONCENTRATIONS; DOPED SILICON; ELECTRICAL DEACTIVATION; IMAGE INTENSITIES; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SECTION IMAGE; SILICON CRYSTAL; STATISTICAL ANALYSIS;

IMAGE ANALYSIS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ANTIMONY;

EID: 77955477790 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.081301 Document Type: Article

Times cited : (14)

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- Two Sb atoms substituted in a column have a little chance of being within 7 layers around the focal position, since the binomial distribution predicts 0.2% for the probability of finding two Sb atoms within 7 layers. In addition, since the cluster has h110i bonds, any two Sb atoms forming a cluster cannot be aligned along the h100i column in our STEM image
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