Highly n-doped silicon: Deactivating defects of donors

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 24, 2004, Pages 1-8

  Mueller, D Christoph ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; DIMER; SILICON;

AB INITIO CALCULATION; ARTICLE; ATOM; CLUSTER ANALYSIS; CRYSTAL STRUCTURE; DONOR; LOW TEMPERATURE;

EID: 14944348282     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.245207     Document Type: Article

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31. The values given here are not corrected for the underestimated band gap in DFT. For a detailed description of the calculation of impurity levels see Ref. 17.
32. The formation energies are given with respect to two substitutional donors infinitely apart (Ref. 17).
33. See Appendix A for detailed calculations.
34. k.
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36. As was assumed in earlier work (Ref. 14).