Three-dimensional atom mapping of dopants in Si nanostructures

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Thompson, Keith ^a   Booske, John H ^b   Larson, David J ^a   Kelly, Thomas F ^a  

^a Imago Scientific Instruments   (United States)

^b University of Wisconsin ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM MAPPING; DOPANTS; GATE CONTACTS; GRAIN-BOUNDARY SEGREGATION;

ANNEALING; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SILICON; THIN FILMS; TOMOGRAPHY;

NANOSTRUCTURED MATERIALS;

EID: 33645499321     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2005368     Document Type: Article

References (6)

1. P. M. Voyles, D. A. Muller, J. L. Grazul, P. H. Citrin, and H. J. L. Gossmann, Nature (London) 416, 826 (2002).
2. P. M. Voyles, D. A. Muller, and E. J. Kirkland, Microsc. Microanal. 10, 291 (2004).
3. th International Conference on Secondary Ion Mass Spectrometry, edited by, R. Lareau, G. Gillen, and, S. Hues, Gaithersburg, MD, 1999, pp. 209-212.
4. T. F. Kelly, T. T. Gribb, J. D. Olson, R. L. Martens, J. D. Shepard, S. A. Weiner, T. C. Kunicki, R. M. Ulfig, D. R. Lenz, E. M. Strennen, E. Oltman, J. H. Bunton, and D. R. Strait, Microsc. Microanal. 10, 373 (2004).
5. T. F. Kelly and M. K. Miller, Rev. Sci. Instrum. (unpublished).
6. D. J. Larson, D. R. Foord, A. K. Petford-Long, H. Liew, M. G. Blamire, A. Cerezo, G. D. W. Smith, Ultramicroscopy 79, 287 (1999).