Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Infrared Physics and Technology

Volumn 54, Issue 3, 2011, Pages 252-257

  Plis, E ^a,b   Kutty, M N ^a   Myers, S ^a   Kim, H S ^a   Gautam, N ^a   Dawson, L R ^a   Krishna, S ^a  

^a MSC01 1070   (United States)

^b NONE   (United States)

Author keywords

Infrared detectors; LWIR detectors; Molecular beam epitaxy; nBn detector; Passivation; Superlattice

Indexed keywords

AMMONIUM SULFIDE; APPLIED BIAS; CUTOFF WAVELENGTHS; DIELECTRIC DEPOSITION; INAS/GASB; LONGWAVE INFRARED; LWIR DETECTORS; NBN DETECTOR; ORDER OF MAGNITUDE; SILICON DIOXIDE; SPECIFIC DETECTIVITY; STRAINED LAYER SUPERLATTICE; SULPHUR DEPOSITION; SULPHUR PASSIVATION;

AMMONIUM COMPOUNDS; DETECTORS; EPITAXIAL GROWTH; INDIUM ANTIMONIDES; INFRARED DETECTORS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE CHANGE MEMORY; PHOTORESISTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; SILICON DETECTORS; SILICON NITRIDE; SILICON OXIDES; SULFUR; SUPERLATTICES; ZINC SULFIDE;

PASSIVATION;

EID: 79955015346     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2010.12.024     Document Type: Conference Paper

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