메뉴 건너뛰기




Volumn 96, Issue 23, 2010, Pages

Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND LIMITED PERFORMANCE; BAND GAPS; CURRENT BLOCKING LAYERS; DETECTIVITY; FIELD OF VIEWS; INAS/GASB; INAS/GASB SUPERLATTICES; LONG WAVE INFRARED; PERFORMANCE IMPROVEMENTS; RESPONSIVITY; SINGLE PASS; STRAINED LAYER SUPERLATTICE;

EID: 77953522140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3446967     Document Type: Article
Times cited : (139)

References (17)
  • 2
    • 36549095407 scopus 로고
    • JAPIAU 0021-8979,. 10.1063/1.339468
    • D. L. Smith and C. Mailhiot, J. Appl. Phys. JAPIAU 0021-8979 62, 2545 (1987). 10.1063/1.339468
    • (1987) J. Appl. Phys. , vol.62 , pp. 2545
    • Smith, D.L.1    Mailhiot, C.2
  • 3
    • 33645770691 scopus 로고    scopus 로고
    • OELREM 1230-3402,. 10.2478/s11772-006-0012-2
    • A. Rogalski, Opto-Electron. Rev. OELREM 1230-3402 14, 84 (2006). 10.2478/s11772-006-0012-2
    • (2006) Opto-Electron. Rev. , vol.14 , pp. 84
    • Rogalski, A.1
  • 4
    • 34047092798 scopus 로고    scopus 로고
    • Material considerations for third generation infrared photon detectors
    • DOI 10.1016/j.infrared.2006.10.015, PII S1350449506001411
    • A. Rogalski, Infrared Phys. Technol. IPTEEY 1350-4495 50, 240 (2007). 10.1016/j.infrared.2006.10.015 (Pubitemid 46529511)
    • (2007) Infrared Physics and Technology , vol.50 , Issue.2-3 , pp. 240-252
    • Rogalski, A.1
  • 9
    • 35548998729 scopus 로고    scopus 로고
    • Dark current suppression in type II InAsGaSb superlattice long wavelength infrared photodiodes with M-structure barrier
    • DOI 10.1063/1.2800808
    • B. M. Nguyen, D. Hoffman, P. Y. Delaunay, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 91, 163511 (2007). 10.1063/1.2800808 (Pubitemid 350004073)
    • (2007) Applied Physics Letters , vol.91 , Issue.16 , pp. 163511
    • Nguyen, B.-M.1    Hoffman, D.2    Delaunay, P.-Y.3    Razeghi, M.4
  • 12
    • 0032606774 scopus 로고    scopus 로고
    • JAPIAU 0021-8979,. 10.1063/1.370905
    • G. C. Dente and M. L. Tilton, J. Appl. Phys. JAPIAU 0021-8979 86, 1420 (1999). 10.1063/1.370905
    • (1999) J. Appl. Phys. , vol.86 , pp. 1420
    • Dente, G.C.1    Tilton, M.L.2
  • 13
    • 77953488763 scopus 로고    scopus 로고
    • SENTAURUS device user guide, Version C-2009.06, June 2009.
    • SENTAURUS device user guide, Version C-2009.06, June 2009 (http://www.synopsys.com/Tools/TCAD/Pages/default.aspx).
  • 14
    • 77955758976 scopus 로고    scopus 로고
    • Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate
    • APPLAB 0003-6951 (to be published).
    • A. Khoshakhlagh, F. Jaeckel, C. Hains, J. B. Rodriguez, L. R. Dawson, K. Malloy, and S. Krishna, " Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate.," Appl. Phys. Lett. APPLAB 0003-6951 (to be published).
    • Appl. Phys. Lett.
    • Khoshakhlagh, A.1    Jaeckel, F.2    Hains, C.3    Rodriguez, J.B.4    Dawson, L.R.5    Malloy, K.6    Krishna, S.7
  • 17
    • 77953488235 scopus 로고    scopus 로고
    • QSIP Conference Presentation.
    • A. F. Milton, QSIP 2009 Conference Presentation, http://qsip.jpl.nasa. gov/qsip-presentations.html.
    • (2009)
    • Milton, A.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.