-
1
-
-
36749115616
-
-
APPLAB 0003-6951,. 10.1063/1.89273
-
G. A. Sai-Halasz, R. Tsu, and L. Esaki, Appl. Phys. Lett. APPLAB 0003-6951 30, 651 (1977). 10.1063/1.89273
-
(1977)
Appl. Phys. Lett.
, vol.30
, pp. 651
-
-
Sai-Halasz, G.A.1
Tsu, R.2
Esaki, L.3
-
2
-
-
36549095407
-
-
JAPIAU 0021-8979,. 10.1063/1.339468
-
D. L. Smith and C. Mailhiot, J. Appl. Phys. JAPIAU 0021-8979 62, 2545 (1987). 10.1063/1.339468
-
(1987)
J. Appl. Phys.
, vol.62
, pp. 2545
-
-
Smith, D.L.1
Mailhiot, C.2
-
3
-
-
33645770691
-
-
OELREM 1230-3402,. 10.2478/s11772-006-0012-2
-
A. Rogalski, Opto-Electron. Rev. OELREM 1230-3402 14, 84 (2006). 10.2478/s11772-006-0012-2
-
(2006)
Opto-Electron. Rev.
, vol.14
, pp. 84
-
-
Rogalski, A.1
-
4
-
-
34047092798
-
Material considerations for third generation infrared photon detectors
-
DOI 10.1016/j.infrared.2006.10.015, PII S1350449506001411
-
A. Rogalski, Infrared Phys. Technol. IPTEEY 1350-4495 50, 240 (2007). 10.1016/j.infrared.2006.10.015 (Pubitemid 46529511)
-
(2007)
Infrared Physics and Technology
, vol.50
, Issue.2-3
, pp. 240-252
-
-
Rogalski, A.1
-
5
-
-
43349103640
-
Mid-IR focal plane array based on type-II InAsGaSb strain layer superlattice detector with nBn design
-
DOI 10.1063/1.2920764
-
H. S. Kim, E. Plis, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, L. R. Dawson, S. Krishna, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, and M. Sundaram, Appl. Phys. Lett. APPLAB 0003-6951 92, 183502 (2008). 10.1063/1.2920764 (Pubitemid 351662047)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.18
, pp. 183502
-
-
Kim, H.S.1
Plis, E.2
Rodriguez, J.B.3
Bishop, G.D.4
Sharma, Y.D.5
Dawson, L.R.6
Krishna, S.7
Bundas, J.8
Cook, R.9
Burrows, D.10
Dennis, R.11
Patnaude, K.12
Reisinger, A.13
Sundaram, M.14
-
6
-
-
49149124035
-
-
IEJQA7 0018-9197,. 10.1109/JQE.2008.916701
-
P. Y. Delaunay, B. M. Nguyen, D. Hoffman, and M. Razeghi, IEEE J. Quantum Electron. IEJQA7 0018-9197 44, 462 (2008). 10.1109/JQE.2008.916701
-
(2008)
IEEE J. Quantum Electron.
, vol.44
, pp. 462
-
-
Delaunay, P.Y.1
Nguyen, B.M.2
Hoffman, D.3
Razeghi, M.4
-
7
-
-
0037115559
-
-
JAPIAU 0021-8979,. 10.1063/1.1521255
-
C. H. Grein, M. E. Flatte, T. C. Hasenberg, J. T. Olesberg, S. A. Anson, L. Zhang, and T. F. Boggess, J. Appl. Phys. JAPIAU 0021-8979 92, 7311 (2002). 10.1063/1.1521255
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 7311
-
-
Grein, C.H.1
Flatte, M.E.2
Hasenberg, T.C.3
Olesberg, J.T.4
Anson, S.A.5
Zhang, L.6
Boggess, T.F.7
-
8
-
-
34547446713
-
NBn structure based on InAs/GaSb type-II strained layer superlattices
-
DOI 10.1063/1.2760153
-
J. B. Rodriguez, E. Plis, G. Bishop, Y. D. Sharma, H. Kim, L. R. Dawson, and S. Krishna, Appl. Phys. Lett. APPLAB 0003-6951 91, 043514 (2007). 10.1063/1.2760153 (Pubitemid 47174515)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.4
, pp. 043514
-
-
Rodriguez, J.B.1
Plis, E.2
Bishop, G.3
Sharma, Y.D.4
Kim, H.5
Dawson, L.R.6
Krishna, S.7
-
9
-
-
35548998729
-
Dark current suppression in type II InAsGaSb superlattice long wavelength infrared photodiodes with M-structure barrier
-
DOI 10.1063/1.2800808
-
B. M. Nguyen, D. Hoffman, P. Y. Delaunay, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 91, 163511 (2007). 10.1063/1.2800808 (Pubitemid 350004073)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.16
, pp. 163511
-
-
Nguyen, B.-M.1
Hoffman, D.2
Delaunay, P.-Y.3
Razeghi, M.4
-
10
-
-
33748985986
-
Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes
-
DOI 10.1063/1.2356697
-
I. Vurgaftman, E. H. Aifer, C. L. Canedy, J. G. Tischler, J. R. Meyer, J. H. Warner, E. M. Jackson, G. Hildebrandt, and G. J. Sullivan, Appl. Phys. Lett. APPLAB 0003-6951 89, 121114 (2006). 10.1063/1.2356697 (Pubitemid 44439748)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.12
, pp. 121114
-
-
Vurgaftman, I.1
Aifer, E.H.2
Canedy, C.L.3
Tischler, J.G.4
Meyer, J.R.5
Warner, J.H.6
Jackson, E.M.7
Hildebrandt, G.8
Sullivan, G.J.9
-
11
-
-
67650727429
-
-
APPLAB 0003-6951,. 10.1063/1.3177333
-
D. Z.-Y. Ting, C. J. Hill, A. Soibel, S. A. Keo, J. M. Mumolo, J. Nguyen, and S. D. Gunapala, Appl. Phys. Lett. APPLAB 0003-6951 95, 023508 (2009). 10.1063/1.3177333
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 023508
-
-
Ting, D.Z.-Y.1
Hill, C.J.2
Soibel, A.3
Keo, S.A.4
Mumolo, J.M.5
Nguyen, J.6
Gunapala, S.D.7
-
12
-
-
0032606774
-
-
JAPIAU 0021-8979,. 10.1063/1.370905
-
G. C. Dente and M. L. Tilton, J. Appl. Phys. JAPIAU 0021-8979 86, 1420 (1999). 10.1063/1.370905
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 1420
-
-
Dente, G.C.1
Tilton, M.L.2
-
13
-
-
77953488763
-
-
SENTAURUS device user guide, Version C-2009.06, June 2009.
-
SENTAURUS device user guide, Version C-2009.06, June 2009 (http://www.synopsys.com/Tools/TCAD/Pages/default.aspx).
-
-
-
-
14
-
-
77955758976
-
Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate
-
APPLAB 0003-6951 (to be published).
-
A. Khoshakhlagh, F. Jaeckel, C. Hains, J. B. Rodriguez, L. R. Dawson, K. Malloy, and S. Krishna, " Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate.," Appl. Phys. Lett. APPLAB 0003-6951 (to be published).
-
Appl. Phys. Lett.
-
-
Khoshakhlagh, A.1
Jaeckel, F.2
Hains, C.3
Rodriguez, J.B.4
Dawson, L.R.5
Malloy, K.6
Krishna, S.7
-
15
-
-
79953697138
-
-
PSISDG 0277-786X.
-
H. S. Kim, E. A. Plis, N. Gautam, A. Khoshakhlagh, S. Myers, M. Y. Kutty, Y. Sharma, L. R. Dawson, and S. Krishna, Proc. SPIE PSISDG 0277-786X 7660, 76601U (2010).
-
(2010)
Proc. SPIE
, vol.7660
-
-
Kim, H.S.1
Plis, E.A.2
Gautam, N.3
Khoshakhlagh, A.4
Myers, S.5
Kutty, M.Y.6
Sharma, Y.7
Dawson, L.R.8
Krishna, S.9
-
17
-
-
77953488235
-
-
QSIP Conference Presentation.
-
A. F. Milton, QSIP 2009 Conference Presentation, http://qsip.jpl.nasa. gov/qsip-presentations.html.
-
(2009)
-
-
Milton, A.F.1
|