Study of surface treatments on InAs/GaSb superlattice lwir detectors

Journal of Electronic Materials

Volumn 39, Issue 10, 2010, Pages 2203-2209

  Kutty, M N ^a   Plis, E ^a   Khoshakhlagh, A ^a   Myers, S ^a   Gautam, N ^a   Smolev, S ^a   Sharma, Y D ^a   Dawson, R ^a   Krishna, S ^a   Lee, S J ^b   Noh, S K ^b  

^a MSC01 1070   (United States)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Chemical treatment; Gallium antimonide; III V semiconductors; Infrared detectors; Strained layer superlattice; Surface morphology

Indexed keywords

CHEMICAL ETCH; CHEMICAL ETCHANTS; CHEMICAL TREATMENTS; DETECTOR STRUCTURE; ETCHED SURFACE; ETCHING SOLUTIONS; GALLIUM ANTIMONIDE; II-IV SEMICONDUCTORS; INAS; INAS/GASB; INAS/GASB SUPERLATTICES; INDUCTIVELY-COUPLED; MEAN-SQUARE; MESA SIDEWALL; NATIVE OXIDES; READOUT INTEGRATED CIRCUITS; SIDEWALL PROFILES; STRAINED-LAYER SUPERLATTICE; WET AND DRY;

DETECTORS; ELECTROMAGNETIC INDUCTION; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INDUCTIVELY COUPLED PLASMA; INFRARED DETECTORS; MORPHOLOGY; PLASMA ETCHING; SUBSTRATES; SUPERLATTICES; SURFACE MORPHOLOGY;

GALLIUM ALLOYS;

EID: 78149410878     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1242-0     Document Type: Article

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