Etching of As- and P-Based III-V Semiconductors in a Planar Inductively Coupled BCl3/Ar Plasma

Journal of Electronic Materials

Volumn 33, Issue 4, 2004, Pages 358-363

  Lee, J W ^a   Lim, W T ^a   Baek, I K ^a   Yoo, S R ^a   Jeon, M H ^a   Cho, G S ^a   Pearton, S J ^b  

^a Inje University   (South Korea)

^b University of Florida   (United States)

Author keywords

Etching; GaAs; III V semiconductors; Inductively coupled plasma

Indexed keywords

BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH FROM MELT; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; MOLECULAR BEAM EPITAXY; PLASMA ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SILICON WAFERS; SURFACE CLEANING;

LOW DAMAGE PATTERNING; PLASMA CHEMISTRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2342560577     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0143-5     Document Type: Article

References (37)

1. See, for example, the review by S.W. Pang, in Handbook of Advanced Plasma Processing, ed. R.J. Shul (Berlin: Springer-Verlag, 2000), pp. 107-149.
2. R. Khare, J. Brown, M. Hu, D. Pierson, and M. Melendes, J. Vac. Sci. Technol. B12, 2947 (1994).
3. S. Thomas III, K.K. Ko, and S.W. Pang, J. Vac. Sci. Technol. A 13, 894 (1995).
4. K.K. Ko and S.W. Pang, J. Electrochem. Soc. 142, 3945 (1995).
5. S. Thomas III and S.W. Pang, J. Vac. Sci. Technol. B 13, 2350 (1995).
6. E.W. Sabin, J. Vac. Sci. Technol. B 16, 1841 (1998).
7. S. Thomas III, E.W. Berg, and S.W. Pang, J. Vac. Sci. Technol B 14, 1807 (1996).
8. T. Yoshikawa, S. Kohmoto, S. Sugimoto, and K. Askawa, Electron. Commun. Jpn., Part 2 (Electronics) 77, 24 (1994).
9. O. Wada, Microelectronics Reliability 39, 1839 (1999).
10. S. Thomas III and J.J. Brown, in Handbook of Advanced Plasma Processing Techniques, ed. R.J. Shul and S.J. Pearton (Berlin: Springer-Verlag, 2000).
11. K. Mochizuki, T. Oka, K. Ouchi, and T. Tanoue, Solid-State Electron. 43, 1425 (1999).
12. T. Low, T. Shirley, C. Hutchison, G. Essilifie, W. Whitely, B. Yeats, and D. D'Avanzo, Solid-State Electron. 43, 1437 (1999).
13. K.L. Seaward, N.J. Moll, D.J. Coulman, and W.F. Stickle, J. Appl. Phys. 61 2358 (1987).
14. C.R. Eddy, Jr., O.J. Clembocki, D. Leonhardt, V.A. Shamamian, R.T. Holm, B.D. Thoms, J.E. Butler, and S.W. Pang, J. Electron. Mater. 26, 1320 (1997).
15. C.R. Eddy, Jr., D. Leonhardt, S.R. Douglass, B.D. Thorns, V.A. Shamamian, and J.E. Butler, J. Vac. Sci. Technol. A 17, 38 (1999).
16. C.R. Eddy, D. Leonhardt, V.A. Shamamian, J.R. Meyer, C.A. Hoffman, and J.E. Butler, J. Electron. Mater. 28, 347 (1999).
17. R.J. Shul, G.B. McClellan, R.D. Briggs, D.J. Rieger, S.J. Pearton, C.R. Abernathy, J.W. Lee, C. Constantine, and C. Baratt, J. Vac. Sci. Technol. A 15, 633 (1997).
18. S.S. Li, S.-H. Kim, J.-J. Moon, and J.H. Lee, Infra-red Phys. Technol. 44, 235 (2003).
19. K. Petter, T. Kipp, C. Heyn, D. Heitmann, and C. Schuller, Appl. Phys. Lett. 81, 592 (2003).
20. R.J. Shul, A.J. Howard, C.B. Vartuli, P.A. Barnes, and W. Seng, J. Vac. Sci. Technol. A 14, 1102 (1996).
21. R.J. Shul and S.J. Pearton, eds., Handbook of Advanced Plasma Processing Techniques (Berlin: Springer-Verlag, 2000).
22. E.W. Berg and S.W. Pang, J. Electrochem. Soc. 146, 775 (1999).
23. C. Youtsey and I. Adesida, in Handbook of Advanced Plasma Processing Techniques, ed. R.J. Shul (Berlin: Springer-Verlag, 2000), ch. 11.
24. C. Youtsey and I. Adesida, J. Vac. Sci. Technol. B 13, 2360 (1995).
25. J.W. Lee, M.W. Derve, B.H. Reelfs, D. Johnson, J.N. Sasserath, F. Clayton, D.C. Hays, and S.J. Pearton, J. Vac. Sci. Technol. A 18, 1220 (2000).
26. P. Collot, T. Diallo, and J. Canteloup, J. Vac. Sci. Technol. B 9, 2497 (1991).
27. K. Askawa, T. Yoshikawa, S. Kohmoto, Y. Nambu, and Y. Sugimoto, Jpn. J. Appl. Phys. 37, 373 (1998).
28. S. Nunoue, M. Yamamoto, M. Suzuki, C. Nozaki, J. Nishio, L. Sugiura, M. Onomura, K. Itoya, and M. Ishikawa, Jpn. J. Appl. Phys. 37, 1470 (1998).
29. C.I.H. Ashby, A.J. Howard, G.A. Vawter, R.D. Briggs, and M. J. Hafich, Electron. Lett. 31, 1948 (1995).
30. T. Chino, M. Ishino, M. Kito, and Y. Maksui, Proc. 1998 Int. Conf. on InP and Related Materials (Piscataway, NJ: IEEE, 1998), pp. 709-712.
31. M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Aral, and G. U. Bacher, Jpn. J. Appl. Phys. 37, 3576 (1998).
32. A. Matsutari, F. Koyama, and K. Iga, Jpn. J. Appl. Phys. 30, 2123 (1991).
33. J. Hommel, D. Ottenwalder, V. Harle, F. Schneider, A. Menschig, F. Scholz, and H. Schweizer, Microelectronic Eng. 21, 333 (1993).
34. H. Yoshikawa, Y. Sugimoto, H. Yoshii, H. Kawano, S. Kotmoto, and K. Ashakawa, Electron. Lett. 29, 190 (1993).
35. H. Iber, S. Mo, E. Peiner, G. Vollrath, A. Schlachetzki, and F. Fiedler, Semicond. Sci. Technol. 12, 755 (1997).
36. T. Suzuki, N, Haneji, K. Tada, Y. Shimogaki, and Y. Nakano, Jpn. J. Appl. Phys. 41, 15 (2002).
37. I.K. Baek, W.T. Lim, J.W. Lee, M.H. Jeon, G.S. Cho, and S.J. Pearton, J. Vac. Sci. Technol. B 21, 2487 (2003).